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| BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features * * * * High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 -- 0.63 3.68 2.67 1.40 Mechanical Data * * * * Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C G H SG D All Dimensions in mm H G H Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25C unless otherwise specified Characteristic Symbol VDSS VDGS VGS ID Pd Tj Tj, TSTG Value 60 60 20 300 830 150 -55 to +150 Unit V V V mA mW C C Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25C (Note 1) Junction Temperature Operating and Storage Temperature Range Inverse Diode @ TA = 25C unless otherwise specified Characteristic Symbol IF VF Value 0.50 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.5A, Tj = 25C Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Drain-Cutoff Current Drain-Source ON Resistance @ TA = 25C unless otherwise specified Symbol V(BR)DSS VGS(th) IGSS IDSS rDS (ON) RqJA gFS Ciss ton toff Min 60 0.8 -- -- -- -- -- -- -- Typ 90 1.0 -- -- 3.5 -- 200 60 5.0 15 Max -- 3.0 10 0.5 5.0 150 -- -- -- Unit V V nA A W K/W mm pF ns Test Condition ID = 100A, VGS = 0 VGS = VDS, ID = 1.0mA VGS = 15V, VDS = 0 VDS = 25V, VGS = 0 VGS = 10V, ID = 0.2mA Note 1 VDS = 10V, ID = 0.2A, f = 1MHz VDS = 10V, VGS = 0, f =1.0MHz VGS = 10V, VDS = 10V, RD = 100W Thermal Resistance, Junction to Ambient Air Forward Transconductance Input Capacitance Turn On Time Turn Off Time Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. DS21802 Rev. D-3 1 of 2 BS170 ID (ON), DRAIN SOURCE ON CURRENT (A) 1 1 7V TA = 25C Pd, POWER DISSIPATION (W) 0.8 (See Note 1) 0.8 VGS = 6V 0.6 0.6 Pulse test width 80s; pulse duty factor 1% 5V 0.4 0.4 0.2 0.2 4V 3V 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1. Power Derating Curve 200 0.1 0 20 40 60 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics ID (ON), DRAIN SOURCE ON-CURRENT (mA) 500 TA = 25C VGS = 5V 1.0 VDS = 10V TA = 25C 400 ID, DRAIN CURRENT (A) Pulse test width 80s; pulse duty factor 1% 0.8 Pulse test width 80s; pulse duty factor 1% 300 4.5V 0.6 200 4.0V 0.4 100 3.5V 0.2 3.0V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage gfs, FORWARD TRANSCONDUCTANCE (mm) gf s, FORWARD TRANSCONDUCTANCE (mm) 500 VDS = 10V 500 VDS = 10V 400 Pulse test width 80s; pulse duty factor 1% 400 Pulse test width 80s; pulse duty factor 1% 300 300 200 200 100 100 0 0 2 4 6 8 10 0 0 100 200 300 400 500 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage ID, DRAIN CURRENT (mA) Fig. 6 Transconductance vs. Drain Current DS21802 Rev. D-3 2 of 2 BS170 |
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